18th European symposium on reliability of electron devices, failure physics and analysisLABAT, Nathalie; TOUBOUL, André.Microelectronics and reliability. 2007, Vol 47, Num 9-11, issn 0026-2714, 545 p.Conference Proceedings

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memoriesPIC, D; GOGUENHEIM, D; OGIER, J.-L et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1373-1377, issn 0026-2714, 5 p.Conference Paper

A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulationBENMANSOUR, A; AZZOPARDI, S; MARTIN, J. C et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1800-1805, issn 0026-2714, 6 p.Conference Paper

ESD protection strategies in advanced CMOS SOI ICsKHAZHINSKY, M. G.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1313-1321, issn 0026-2714, 9 p.Conference Paper

Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneitiesPERPINA, X; CASTELLAZZI, A; PITON, M et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1784-1789, issn 0026-2714, 6 p.Conference Paper

Fault localization at high voltage devices using thermally induced voltage alteration (TIVA)REISSNER, M.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1561-1564, issn 0026-2714, 4 p.Conference Paper

New developments of THERMOS³, a tool for 3D electro-thermal simulation of smart power MOSFETsIRACE, Andrea; BREGLIO, Giovanni; SPIRITO, Paolo et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1696-1700, issn 0026-2714, 5 p.Conference Paper

Statistical analysis during the reliability simulationBESTORY, C; MARC, F; LEVI, H et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1353-1357, issn 0026-2714, 5 p.Conference Paper

Torsion test applied for reballing and solder paste volume evaluationMAIA, W. C; BRIZOUX, M; FREMONT, H et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1663-1667, issn 0026-2714, 5 p.Conference Paper

Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditionsBENMANSOUR, A; AZZOPARDI, S; MARTIN, J. C et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1730-1734, issn 0026-2714, 5 p.Conference Paper

A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTsCASTELLAZZI, A; CIAPPA, M; FICHTNER, W et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1713-1718, issn 0026-2714, 6 p.Conference Paper

Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devicesGOROLL, Michael; KANERT, Werner; PUFALL, Reinhard et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1512-1516, issn 0026-2714, 5 p.Conference Paper

Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stressFARMAKIS, F. V; KONTOGIANNOPOULOS, G. P; KOUVATSOS, D. N et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1434-1438, issn 0026-2714, 5 p.Conference Paper

Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stressesALWAN, M; BEYDOUN, B; KETATA, K et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1406-1410, issn 0026-2714, 5 p.Conference Paper

Modeling of the breakdown mechanisms for porous copper/low-k process flowsHONG, Changsoo; MILOR, Linda.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1478-1482, issn 0026-2714, 5 p.Conference Paper

Monitoring fading rate of ultracapacitors using online characterization during power cyclingLAJNEF, W; VINASSA, J.-M; BRIAT, O et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1751-1755, issn 0026-2714, 5 p.Conference Paper

Reliability methods and standardsBISSCHOP, J.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1330-1335, issn 0026-2714, 6 p.Conference Paper

Sequential environmental stresses tests qualification for automotive componentsBAHI, M. A; LECUYER, P; FREMONT, H et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1680-1684, issn 0026-2714, 5 p.Conference Paper

The robustness of series-connected high power IGBT modulesABBATE, C; BUSATTO, G; FRATELLI, L et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1746-1750, issn 0026-2714, 5 p.Conference Paper

Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigationsPUGATSCHOW, A; HEIDERHOFF, R; BALK, L. J et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1529-1533, issn 0026-2714, 5 p.Conference Paper

Applications of DCIV method to NBTI characterizationNEUGROSCHEL, A; BERSUKER, G; CHOI, R et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1366-1372, issn 0026-2714, 7 p.Conference Paper

Dynamic laser stimulation techniques for advanced failure analysis and design debug applicationsBEAUDOIN, F; SANCHEZ, K; PERDU, P et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1517-1522, issn 0026-2714, 6 p.Conference Paper

Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systemsLERAY, J. L.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1827-1835, issn 0026-2714, 9 p.Conference Paper

Failure modes on low voltage power MOSFETs under high temperature applicationDUPONT, L; LEFEBVRE, S; BOUAROUDJ, M et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1767-1772, issn 0026-2714, 6 p.Conference Paper

Flexible active cycle stress testing of smart power switchesGLAVANOVICS, Michael; KOCK, Helmut; KOSEL, Vladimir et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1790-1794, issn 0026-2714, 5 p.Conference Paper